Be ions are implanted into Te-doped Ga0.96Al0.04Sb layers grown by liquid-phase epitaxy. Be distribution is analyzed from secondary-ion mass spectrometry profiles and is found to be in good agreement with a computed simulation one. Hall-effect measurements show a complete electrical activity of the Be-implanted ions. Mesa devices are realized on the Ga0.96Al0.04Sb p+/Ga0.96Al0.04Sb n−/GaSb+ system: Be implantation leads to good quality junctions exhibiting homogeneous multiplication.
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Pérotin et al. (1990) studied this question.
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