High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022)

This is the authors' abstract. We don't add key points for this paper.

Schottky Barrier Diodes GaN is a promising candidate for next-generation power electronic devices, but its potential is far from being realized. In article number 2107301, Peng Chen, Rong Zhang, Youdou Zheng, and co-workers demonstrate a high power figure-of-merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel, and sub-100-μm anode-to-cathode spacing without any other additional structures, which gives a clear and positive answer that GaN can be used in ultra-high voltage applications.