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The epitaxial growth of GaAs 1-x Sb x crystals from solution has been studied at constant temperatures of 700 degrees C or lower. Single crystals of GaAs 1-x Sb x with compositions of x<0.14 and x>0.8 were obtained. Good compositional uniformity in the epitaxial layer along the growth direction was attained in spite of the peculiar phase diagram with a flat solidus curve.
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Takenaka et al. (1978) studied this question.
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