Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

This letter investigates extra traps measured by charge pumping technique in the high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks. N-Vhigh level characteristic curves with different duty ratios show that the hole discharge time (tbase level) dominates the value of extra traps. By fitting ln (N (tbase level = 1μs) − N (tbase level)) − Δtbase level at different temperatures and computing the equation t = τ0 exp (αh,SiO2dSiO2 + αh,HfO2dHfO2,trap), the results show that these extra traps measured by the charge pumping technique at high voltage zone can be attributed to high-k bulk shallow traps.