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We demonstrate the transfer-printing-based integration of III-V substrate-illuminated p-i-n photodetectors onto a 4-wavelength-channel silicon photonics polarization diversity receiver circuit. 4×25 Gbps operation is demonstrated for 2.5-nm wavelength channel spacing in the C-band. Transfer printing is an enabling technology for massively parallel heterogeneous III-V-on-Si integration.
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Muliuk et al. (2018) studied this question.
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