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January 1, 2024IEEE Journal of the Electron Devices SocietyOpen Access

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

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Authors

LGLinfei GaoZZZe ZhongQZQiyan Zhang

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Cite This Study

Gao et al. (2024) studied this question.

synapsesocial.com/papers/6aa44569aaaedccdac74acfdhttps://doi.org/10.1109/jeds.2024.3362048
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  1. 1Space-Charge-Limited Currents in Solids1955 · 1,759 citations
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  4. 4Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs2016 · 174 citations
  5. 5Gate Reliability of p-GaN HEMT With Gate Metal Retraction2019 · 59 citations