A novel procedure to decompose the I- V switching curves of complementary resistive switching (CRS) RRAM cells into the intrinsic switching characteristics of its individual constituting elements is proposed based on the set behavior of HfO2-based bipolar RRAM elements. Analysis of different types of complementary cells indicates that very similar intrinsic switching behaviors occur in strongly different types of bipolar switching RRAM, however with a strong material dependence of the characteristic switching voltage.
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Wouters et al. (2012) studied this question.
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