In this paper, we present a novel through-silicon-via (TSV)-based 3-D inductor structure with ground TSV shielding for better noise performance. In addition, a circuit model is proposed for the inductor, which can reduce the simulation time over finite-element-based 3-D full-wave simulation. Rigorous 3-D full-wave simulation is performed up to 10 GHz to validate the circuit model. The ground TSV-based 3-D inductor is found to be resilient to TSV-TSV crosstalk noise compared with conventional 3-D inductors. The simulation results revealed that more than -33 dB of isolation can be achieved at 2 GHz between the 3-D inductor and the noise probe.
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Mondal et al. (2016) studied this question.