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Experimental study demonstrates ultra-high sensitivity and a low detection limit in a 3D silicon carbide X-ray detector, indicating promise for low-dose medical imaging.
A novel and highly sensitive X-ray detector with three-dimensional structured electrodes (3D-SiC) has been prepared on a high-resistivity silicon carbide substrate. The detector consistently demonstrates a low leakage current of 7.1 pA and 280 pA with the bias of 200 V at room temperature and 150°C, respectively. In the X-ray response test, the 3D-SiC detector exhibits high sensitivity of5.65× 10 ^4~μC·Gyₐᵢᵣ^-1·cm^-2. Meanwhile, it exhibits a linear response to dose rates ranging from 0.67 to3.02~μGyₐᵢᵣ·s^-1. So, the detection limit could be calculated as low as 6.92 nGyₐᵢᵣ·s^-1. Comparing with planar semiconductor-based X-ray detectors, 3D-SiC detector shows ultra-high sensitivity with extremely low detection limit at room temperature. This characteristic renders it potentially advantageous in domains characterized by limited X-ray detection and imaging capabilities, such as the field of X-ray medical diagnosis.
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Xu et al. (2025) studied this question.
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