The method of integral characteristics in X-ray diffraction studies of the structure of the surface layers of single crystals

A further development is presented of the integral-characteristics method which is suggested in an earlier work for investigating the damage localized in surface layers of single crystals by X-ray diffraction technique. In the case of ion implantation with a small irradiation dose a generalization of the model for a disturbed layer is suggested which assumes the flux density of incident particles to be insufficient for damaging all the crystal surface. Recommendations for the practical application of the method are also given. The method is used to study a disturbed layer structure of silicon single crystals irradiated with ions of argon, phosphorus, and boron.