Hopping conductivity in heavily doped strongly compensated GaAs

The hopping conductivity in heavily doped and closely compensated LPE gallium arsenide is investigated in the temperature range 4.2 to 250 K. It is found that the resistivity in n‐type samples increases with lowering the temperature as In Q ∼ (T★/T)α where α takes successively the values 1, 1/2, and 1/4. The values of T★ in the corresponding temperature ranges are in a good agreement with theoretically calculated ones provided one takes into account the correlation in the impurity distribution. The resistivity in analogous p‐type closely compensated samples depends on temperature as In Q ∼ T−1/2 as a rule.