We report on a novel method to measure radiation induced non radiative carrier lifetime modifications in laser diodes. This method is based on the conjugation of theoretical gain calculation, experimental gain measurements, and threshold variation measurements. We show that lifetime variations measured that way are in good agreement with those measured using time resolved photoluminescence (TRPL), and that the methodology can be applied to annealed samples, whose carrier lifetime cannot be otherwise measured.
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Boutillier et al. (2009) studied this question.
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