852-nm emitting Al-free laser diodes and layers constituting the device are irradiated with 1-MeV electrons at fluences ranging from 1014up to 1016e-/cm2. Layers corresponding to the laser diodes materials were characterised using photoluminescence and time resolved photoluminescence. Laser diodes L-I-V characteristics were measured in pulsed and continuous regime.
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Boutillier et al. (2007) studied this question.
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