Investigation of Interface Charges of High-kGate Dielectrics and Their Effects on Carbon Nanotube Field-Effect Transistors

We have investigated the interface charges generated at the interfaces of the high- k gate insulator by Kelvin probe force microscopy, as well as their effects on the properties of carbon nanotube field-effect transistors (CNFETs). It was found that positive charges are concentrated near the interfaces of the gate insulator with Au electrodes and a SiO 2 substrate. The device simulation results show that the charges at the interfaces of the gate insulator with the Au electrodes are responsible for the change in the polarity of the conduction carriers in the CNFETs.