Answers are grounded in this paper and cite their sources.
The carrier mobility in N- und P-channel MOSFET's at high transverse electric field is studied from room to liquid helium temperature. It is shown that the negative transconductance phenomenon obtained at high gate voltage is enlarged by decreasing the temperature. This behavior is attributed to a change in the mobility law for high transverse electric field. An accurate extraction method is proposed in order to determine the new parameters involved in the mobility and the drain current laws. These new relations are successfully employed for the fitting of experimental results obtained with MOS devices from various technologies.
No takes yet. Share an insight, caveat, or question.
Rais et al. (1994) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: