We investigate electron transport in two different types of selectively doped single AlGaAs/GaAs heterojunctions for electric fields up to 2 kV/cm and compare our experimental results with those of a Monte Carlo simulation. In both cases, although good agreement is found at low fields, a discrepancy arises as the electric field reaches higher values. Experimental drift velocities saturate gradually whereas the calculations predict a negative differential mobility beyond 3 kV/cm. Finally, we calculate the electric field dependence of the drift velocity for various electronic densities in one of our structures and show that below 2 kV/cm, the drift velocity increases with increasing electronic sheet density.
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Lasserre et al. (1988) studied this question.
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