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The transport properties of high-mobility electrons in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction systems have been investigated for electric fields (E) up to several kV/cm by pulsed Hall and pulsed current-voltage measurements. It was found that electron mobilities began to decrease drastically in proportion to E−0.8 when the electric fields exceeded (6.2–6.6)×106 (cm/s)/μ0, where μ0 is the low field electron mobility. The saturation of electron velocity was observed at E≥ 2 kV/cm, and its estimated value of (1.5–1.7)×107 cm/s was found to be almost independent both of the temperature in the range below 100 K and the density of electrons in the GaAs well of 3.8×1011 and 1.2×1012/cm2.
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Inoue et al. (1985) studied this question.
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