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October 1, 1983Japanese Journal of Applied Physics

Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice–

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Authors

TBT. BabaTokyo University of Foreign StudiesTMTakashi MizutaniKanagawa Prefecture Medical AssociationMOMasaki OgawaAsahi General Hospital

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Baba et al. (1983) studied this question.

synapsesocial.com/papers/6a6f743526770c2b8ddffef6https://doi.org/10.1143/jjap.22.l627
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  4. 4X-ray diffraction study of interdiffusion and growth in (GaAs)<i>n</i>(AlAs)<i>m</i> multilayers1980 · 297 citations
  5. 5Disorder of an AlAs-GaAs superlattice by silicon implantation1982 · 187 citations