Effect of Surface Reactive Site Density and Reactivity on the Growth of Atomic Layer Deposited WN[sub x]C[sub y] Films

The growth of tungsten nitride carbide, WN x C y , films obtained by atomic layer deposition is determined by the density and type of substrate reactive sites. WN x C y film growth on silicon dioxide is determined by the silanol group concentration, which is a function of the substrate growth temperature. An enhanced WN x C y growth is observed when WN x C y is deposited on hydrogen-terminated silicon due to an initial chemical vapor deposition growth. On silicon nitride, a short transient regime is observed in comparison to the carbide and oxide surfaces attributed to enhanced binding of the triethylboron precursor and compatibility at the interface silicon nitride/ WN x C y .