A 23-ns 1-Mb BiCMOS DRAM

A 1-Mb BiCMOS DRAM having a 23-ns access time is described. The DRAM uses a direct sensing technique and a nonaddress-multiplexing configuration. This technique combines the NMOS differential circuit on each pair of data lines with a common highly sensitive bipolar circuit. The resulting chip has been verified to have high-speed characteristics while maintaining a wide operating margin and a relatively small chip size of 62.2 mm/sup 2/, in spite of a 1.3- mu m lithography level.>