We report the selected-area epitaxy (SAE) of rare-earth iron garnet crystalline and amorphous straight ridge patterns with 8 µm width deposited on Gd3Ga5O12 substrates. The samples were fabricated by a sputter epitaxial method on substrates that were partially etched by ion-beam bombardment. We found that the stripe pattern direction significantly affects the crystallographic formation of the side wall of the grown ridge.
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Okamura et al. (2000) studied this question.
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