A new p-channel GeSi-SIMOX device is presented. The device consists of a Si/Ge/sub 0.3/Si/sub 0.7//Si channel, which is grown pseudomorphically on a SIMOX substrate. Due to reduced vertical electric field and band bending at the surface of a GeSi-SIMOX device, hole confinement in the buried channel is improved over that of a GeSi-bulk device. Experimentally, the effective channel mobility of this device is found to be 90% higher than that of an identically processed conventional SIMOX device.>
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Nayak et al. (1993) studied this question.
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