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The switching layer with SiGeO x /SiGeON structure is investigated to improve the electrical characteristics of resistive nonvolatile memory. A bipolar resistance switching behavior owning inferior stability was observed in Pt/SiGeO x /TiN memory cells. To obtain practical memory, a convenient and compatible SiGeON (∼5 nm) is introduced at SiGeO x /anode interface to stabilize the disruption length of filaments near anode electrode. Compared with Pt/SiGeO x /TiN memory cells, the proposed Pt/SiGeO x /SiGeON/TiN cells is effective at minimizing the dispersions of memory switching parameters.
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Syu et al. (2011) studied this question.
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