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Photocarrier relaxation times τr in low-temperature-grown (LTG) GaAs have been determined with time-resolved reflectance measurements. Measured τr values are extremely sensitive to the substrate temperature during LTG GaAs growth and postgrowth anneal. Photogenerated-electron relaxation times as short as 90 fs are found for LTG GaAs grown at temperatures near 200 °C and annealed at temperatures below 580 °C. We report the results of a systematic investigation of the dependence of τr on growth temperatures between 180 and 260 °C and anneal temperatures between 480 and 620 °C.
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McIntosh et al. (1997) studied this question.
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