Gate leakage current measurements of a guarded MOSFET show that device self-heating has a marked effect on the Schottky emission current. This effect can make the bias conditions for zero gate leakage current very sensitive to changes in drain voltage.
No takes yet. Share an insight, caveat, or question.
Negro et al. (1972) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: