Effects of N 2 plasma treatment of the Al bottom cathode on the characteristics of top-emission-inverted organic-light-emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-8-hydroxyquinoline aluminum (Alq 3 )-emitting layer, an N , N '-diphenyl- N , N '-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) hole transport layer, and an indium-tin-oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to N 2 plasma treatment before deposition of the Alq 3 layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of AlN x between the Alq 3 -emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Al bottom cathode subjected to N 2 plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.
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Kho et al. (2003) studied this question.
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