Low Temperature Improvement Method on Zn:SiOₓ Resistive Random Access Memory Devices

Kuan‐Chang Chang; Tsung‐Ming Tsai; Ting‐Chang Chang; Hsing-Hua Wu; Kai-Huang Chen; Jung‐Hui Chen; Tai-Fa Young; Tian-Jian Chu; Jianyu Chen; Chih-Hung Pan; Yu‐Ting Su; Yong-En Syu; Cheng-Wei Tung; Geng-Wei Chang; Min-Chen Chen; Hui‐Chun Huang; Ya‐Hsiang Tai; Dershin Gan; Jiajie Wu; Ying Hu; Simon M. Sze

doi:10.1109/led.2013.2248075

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Abstract

To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOxthin films are treated by SCCO2fluid mixed with pure water. After SCCO2fluid treatment, the resistive switching qualities of the Zn:SiOxthin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOxthin film is a proresistive switching properties mising material for RRAM applications due to its compatibility with portable flat panel display.

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Chang et al. (2013) studied this question.

synapsesocial.com/papers/6aa59ac0bc2c7db7488e453a https://doi.org/10.1109/led.2013.2248075

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Low Temperature Improvement Method on Zn:SiOₓ Resistive Random Access Memory Devices

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Low Temperature Improvement Method on Zn:SiOₓ Resistive Random Access Memory Devices

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