Although many applications of graded-bandgap structures have been proposed, the epitaxial technique to fabricate this structure has not been well established. In this work, graded-bandgap III-V ternary compound films of GaAs 1- x P x and In x Ga 1- x As have been successfully grown by molecular beam epitaxy merely by controlling the temperature of the effusion cells. Auger electron spectra indicate that the mole fraction changes gradually from x 0 to x 1 within a very thin GaAs 1- x P x layer (1.1 µm). These films were all single crystals.
No takes yet. Share an insight, caveat, or question.
Tateishi et al. (1976) studied this question.