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The electrical properties of p-Si/n-GaAs heterojunctions fabricated by using surface-activated bonding (SAB) were investigated by measuring their current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics. The I – V characteristics showed rectifying properties. Their flat-band voltage obtained from C – V measurements was around 1.6 V. Observation by using field-emission-scanning electron microscopy and energy dispersive X-ray spectroscopy revealed neither structural deficits nor oxide layers at the interfaces. These results suggest that the SAB-based Si/GaAs heterojunctions are applicable for fabricating novel devices.
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Liang et al. (2013) studied this question.
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