Void-Free Room-Temperature Silicon Wafer Direct Bonding Using Sequential Plasma Activation

Room-temperature Si/Si wafer direct bonding has been performed by an optimized sequential plasma activated bonding process. A shorter O 2 reactive ion etching (RIE) plasma (∼10 s) treatment followed by treatment with N 2 radicals for 60 s is used for surface activation. The activated wafers are brought into contact in ambient air. After storage at room temperature for 24 h, high bonding strength (∼2.25 J/m 2 ) is achieved without requiring any annealing process. This value is close to the bulk-fracture strength of silicon. Furthermore, no annealing voids are observed at Si/Si interfaces even if the bonded wafer pairs are heated from 200 to 800 °C in subsequent processes. The bonding interfaces and their optical transmittances are also investigated. This void-free, room-temperature bonding technique based on sequential plasma activation is inexpensive and suitable for the microelectromechanical system manufacturing process and wafer-scale packaging.