A 4H-SiC CMOS SPICE Level 3 Model for Circuit Simulations

In this letter, a compact DC SPICE model for 4H-SiC lateral metal oxide semiconductor field effect transistors is shown both for PMOSFET and NMOSFET. It is validated through experimental comparisons by varying channel sizes, temperature in the range between298Kand573K, and body voltage conditions. A new model of the threshold voltage is introduced in order to take into account the effects of the high interface defects density. Finally, an inverter logic gate is simulated at different temperatures and compared with experimental data and with BSIM4SiC simulation outcomes, where a maximum logic threshold voltage error of0.85%to the experimental data is shown compared to6.78%of BSIM4SiC.