Transfer‐curve assessment of oxide thin‐film transistors

Oxide electronics is an emerging area that is well positioned to strongly and positively impact next‐generation display technology. A metal‐oxide thin‐film transistor (TFT) is the fundamental component of oxide electronics. Unfortunately, some of the claims made in the literature about the performance of oxide TFTs are, in this author's opinion, unreliable. This is true of turn‐on voltage, subthreshold swing, and, especially, channel mobility. Measurement artifacts can lead to unreliable performance estimates. The goal of this contribution is to enumerate some of these artifacts and to outline a general testing procedure for avoiding common oxide‐TFT assessment pitfalls.