The temperature of the maximal conductivity in Si MOS systems

It is shown that, due to the temperature dependence of screening, the low temperature-dependent conductivity is given by sigma (T)= sigma (0) (1-1.39C(n)(T/ epsilon F )-0.81C(n) 2 (T/ epsilon F ) 32 +O (T 2 )) if elastic impurity scattering is considered. 0<C(n)<1 is a density-dependent form factor. With weak localisation and interaction corrections to the conductivity a temperature T m is found, where the conductivity of the two-dimensional electron gas is maximal.