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The wavelength dependence and the absolute values of the photo-ionization cross sections for deep lying impurity levels in GaP are investigated. The measurements are performed on alloyed, copper and oxygen doped GaP diodes. The phenomena studied are on one hand the ir-induced restoration of an optical charge exchange and on the other, the short circuit current and the enhancing or quenching of this current caused by simultaneous ir-illumination. The complete two-level system is resolved and photo-ionization cross sections are given in the range 0.6 to 2.1 eV.
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Grimmeiss et al. (1971) studied this question.
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