Single-crystal Si films on SiO2 prepared by using a stationary graphite heater for lateral epitaxy by seeded solidification

Continuous single-crystal Si films on SiO2 have been prepared by a simplified version of the technique for lateral epitaxy by seeded solidification (LESS). The new method employs transient heating by a simple stationary graphite heater, while the original method utilized two graphite heaters, one of which was moved during LESS processing. The Si films obtained by the one-heater method are comparable in crystal quality to those prepared by the two-heater method.