A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce the channel resistance and a vertical SiC drift region to sustain the high OFF-state voltage. The performance of the HyFET is evaluated by numerical device simulations. Compared with the conventional SiC MOSFET, the HyFET exhibits a greatly reduced RONtogether with a low CGDand low gate charges. The figures of merit QG× RONand QGD× RONof the HyFET are dramatically improved.
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Wei et al. (2016) studied this question.
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