The transient and steady-state excess carrier lifetimes in p-type Hg0.775Cd0.225Te have been measured as a function of temperature. It is demonstrated that the transient lifetime can be greater than the steady-state lifetime by as much as a factor of 16 at 77 K. This difference is attributed to minority-carrier trapping, and explains, in part, the large range of lifetimes which have been reported for this material.
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Fastow et al. (1989) studied this question.
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