Low-resistance ohmic contacts to high-electron-mobility transistors (HEMTs) are essential to ensure optimal device performance. Besides low contact resistance ( < 1 Ω mm ) , good surface morphology and edge acuity are also desirable. We report a systematic study of the ohmic contact scheme Ti ∕ Al ∕ Ti ∕ Au , where the total film thickness was kept constant at 285 nm and the relative ratios of Ti ∕ Al inner layer thicknesses were varied. While the film with the highest Ti ∕ Al ratio had slightly inferior electrical properties, the layer smoothness and edge acuity were far superior to the other ohmic contact schemes.
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Bardwell et al. (2006) studied this question.
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