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November 5, 2004Journal of Applied Physics

Structural and electrical characterization of AuPdAlTi ohmic contacts to AlGaN∕GaN with varying Ti content

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Authors

MFMichael W. FayUniversity of NottinghamGMGrigore MoldovanGalmed Pharmaceuticals (Israel)NWNicola WestonUniversity of Nottingham

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Fay et al. (2004) studied this question.

synapsesocial.com/papers/6aa74ebc45ca485f116d1bf1https://doi.org/10.1063/1.1796514
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  5. 5Mechanism for Ohmic contact formation of Ti on n -type GaN investigated using synchrotron radiation photoemission spectroscopy2002 · 61 citations