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June 23, 2000Semiconductor Science and TechnologyOpen Access

Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability

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Authors

JKJoon Seop KwakKorea Energy Economics InstituteSMSuzanne E. MohneyPennsylvania State UniversityJLJe-Yi LinPennsylvania State University

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Kwak et al. (2000) studied this question.

synapsesocial.com/papers/6aa74ebc45ca485f116d1bf5https://doi.org/10.1088/0268-1242/15/7/316
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n -type GaN1997 · 263 citations
  2. 2Reactive ion etching of GaN using BCl31994 · 215 citations
  3. 3Very low resistance multilayer Ohmic contact to n-GaN1996 · 460 citations
  4. 4Obtaining the specific contact resistance from transmission line model measurements1982 · 1,042 citations