Wave impedances and propagation constants of waves travelling along the electrodes of a long FET structure were experimentally investigated. For this purpose, a GaAs MESFET with large gate width was fabricated. Connecting pads on both ends of the gate and drain electrodes make it possible to measure the four-port S-parameters of the structure. Using these results, it is shown that a great improvement in the gain is possible, if the normally open ends of the FET are connected to the optimum terminations.
No takes yet. Share an insight, caveat, or question.
Fricke et al. (1985) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: