Fast Switching β -Ga2O3Power MOSFET With a Trench-Gate Structure

In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010)β-Ga2O3epitaxial layer are fabricated. Enhancement mode is achieved by the gate-recess process, through thoroughly depleting theβ-Ga2O3channel to get a positive threshold voltage. For the first time, by using a dynamic parameter test system, the Ga2O3MOSFET with 2-μ mgate length is characterized to present short switching time, including turn-on time (tON) of 28.6 ns and turn-off time (tOFF) of 94.0 ns. In addition, OFF-state interelectrode parasitic capacitances, including input capacitance (Cᵢₛₛ) of 37 pF/mm, output capacitance (Cₒₛₛ) of 42 pF/mm, and reverse transfer capacitance (Cᵣₛₛ) of 14 pF/mm are also obtained, which can account for the high switching speed. The static and dynamic switching properties of the trench-gate device show the potential ofβ-Ga2O3MOSFET for the high-speed switching applications.