May 30, 2018Applied Physics Express

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

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Abstract

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer, Wong, Man Hoi, Goto, Ken, Morikawa, Yoji, Kuramata, Akito, Yamakoshi, Shigenobu, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka

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Wong et al. (2018) studied this question.

synapsesocial.com/papers/6aa7c2bb871ca30df5b180ea https://doi.org/10.7567/apex.11.064102

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All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

Abstract

Discussion

Cite This Study

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

Abstract

Discussion

Cite This Study

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