Differential capacitance measurements on Metal-Semiconductor contacts of In-SrTiO 3- x are carried out at room temperature, 4.2 K and 1.75 K. At room temperature, the In-SrTiO 3- x contact is well described by the Schottky barrier model. Barrier height and Fermi level of SrTiO 3- x are determined, and the degeneracy density is estimated, At 4.2 K and 1.75 K, an anomalous bias dependence of the differential capacitance is observed. This anomalous bias dependence is explained by considering the electric field dependence of the permittivity, and it is shown that reasonable barrier widths of contacts are obtained by this calculation.
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Hayashi et al. (1980) studied this question.