A new technology is presented for in-trench device fabrication using selective epitaxial overgrowth and preferential polishing. The silicon quality is investigated by a comparison of diodes in the centre of the trench, butted to the sides and overlapping the entire trench area. Good results were obtained for centre and butted devices. Ideal characteristics were found also for the overlap diodes, but with lower yield.
No takes yet. Share an insight, caveat, or question.
Burghartz et al. (1989) studied this question.
Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context: