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November 29, 2012IEEE Transactions on Electron Devices

SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI

J. Franco B. Kaczer Philippe Roussel Jérôme Mitard Moonju Cho Liesbeth Witters Tibor Grasser G. Groeseneken

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Abstract

We report extensive experimental results of the negative bias temperature instability (NBTI) reliability of SiGe channel pMOSFETs as a function of the main gate-stack parameters. The results clearly show that this high-mobility channel technology offers significantly improved NBTI robustness compared with Si-channel devices, which can solve the reliability issue for sub-1-nm equivalent-oxide-thickness devices. A physical model is proposed to explain the intrinsically superior NBTI robustness.

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Cite This Study

Franco et al. (2012) studied this question.

synapsesocial.com/papers/6aa84d835ea55b24edcdf0ce https://doi.org/10.1109/ted.2012.2225625

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