High performance and high reliability AlGaN/GaN HEMTs

In this paper, a current status and future technologies of high‐power GaN HEMTs was described. First, commercialization roadmap was shown with output power and efficiency status. Power electronics benchmark was also introduced. Reliability improvement technologies were addressed with recent issues such as drift phenomena. Then, future requirements for expanding GaN electronics market were shown with some recent device developments. Novel E‐mode recessed GaN‐HEMT has been developed using the triple cap layer structure. High‐k insulated gate HEMTs using Ta2O5 were also developed. Finally, we described the next generation GaN HEMTs for millimeter‐wave applications. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)