On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region

In this letter, on-resistance (Ron) degradation induced by hot-carrier injection in n-type lateral DMOS transistors with shallow-trench isolation (STI) in the drift region is investigated.Rondecreases at the beginning of stress, butRonincreases as the stress time is increased. Experimental data and technology computer-aided-design simulation results reveal that hot-hole injection and trapping at the STI corner closest to the channel are responsible for theRonreduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for theRonincrease.