A Novel Wide-Temperature-Range, 3.9 ppm/∘C CMOS Bandgap Reference Circuit

This paper presents an innovative CMOS Bandgap Reference Generator topology that leads to an improved curvature compensation method over a very wide temperature range. The proposed design was implemented in a standard 0.35μmCMOS process. The compensation is performed by using only poly-silicon resistors. This is achieved by using a second Op-amp that generates a CTAT current, which is subsequently used to enhance the curvature compensation method. The performance of the circuit was verified experimentally. Measured results have shown temperature coefficients as low as 3.9ppm/∘Cover a temperature range of 165\,∘C(-15\,∘Cto 150\,∘C) and temperature coefficients as low as 13.7ppm/∘Cover an extended temperature range of 200\,∘C(-50\,∘Cto 150\,∘C). In addition the circuit demonstrated very good line regulation performance for a broad range of supply voltages. The measured line regulation at room temperature is 0.039% V.