The effects of nitridation on the density of traps at SiO 2 /SiC interfaces near the conduction band edge were qualitatively examined using a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance–voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge as a result of nitridation, but the interface traps were not completely eliminated by nitridation.
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Hatakeyama et al. (2017) studied this question.
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